Non-equilibrium spin accumulation in ferromagnetic single-electron transistors
نویسندگان
چکیده
We study transport in ferromagnetic single-electron transistors. The non-equilibrium spin accumulation on the island caused by a finite current through the system is described by a generalized theory of the Coulomb blockade. It enhances the tunnel magnetoresistance and has a drastic effect on the time-dependent transport properties. A transient decay of the spin accumulation may reverse the electric current on time scales of the order of the spin-flip relaxation time. This can be used as an experimental signature of the non-equilibrium spin accumulation. PACS. 73.40.Gk Tunneling – 75.70.-i Magnetic films and multilayers – 73.23.Hk Coulomb blockade; single-electron tunneling – 75.70.Pa Giant magnetoresistance
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